Hiroshi Ishiwara,
Masanori Okuyama,
Yoshihiro Arimoto
Springer Berlin Heidelberg
2004e druk, 2004
9783540407188
Ferroelectric Random Access Memories
Fundamentals and Applications
Specificaties
Gebonden, 291 blz.
|
Engels
Springer Berlin Heidelberg |
2004e druk, 2004
ISBN13: 9783540407188
Rubricering
Onderdeel van serie
Topics in Applied Physics
Levertijd ongeveer 9 werkdagen
Gratis verzonden
Samenvatting
The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well.
Specificaties
ISBN13:9783540407188
Taal:Engels
Bindwijze:gebonden
Aantal pagina's:291
Uitgever:Springer Berlin Heidelberg
Druk:2004
Inhoudsopgave
Part I Ferroelectric Thin Films: Overview.- Novel Si-substituted Ferroelectric Films.- Static and Dynamic Properties of Domains.- Nanoscale Phenomena in Ferroelectric Thin Films.- Part II Deposition and Characterization Methods: Sputtering Techniques.- Chemical Approach Using Tailored Liquid Sources to Bi-based Layer-structured Perovskite Thin Films.- Recent Development of Ferroelectric Thin Films by MOCVD.- Materials Integration Strategies.- Characterization by Scanning Nonlinear Dielectric Microscopy.- Part III Fabrication Process and Circuit Design: Current Status of FeRAMs.- Operation Principle and Circuit Design Issues.- High Density Integration.- Testing and Reliability.- Part IV Advanced-Type Memories: Chain FeRAMs.- Capacitor-on-Metal/Via-stacked-Plug (CMVP) Memory Cell and Application to a Non-volatile SRAM.- FET-type FeRAMs.- Part V Applications and Future Prospects: Application to Future Information Technology World.- Subject Index.