Iraj Sadegh Amiri,
Hossein Mohammadi,
Mahdiar Hosseinghadiry
Springer International Publishing
e druk, 2019
9783030045128
Device Physics, Modeling, Technology, and Analysis for Silicon MESFET
Specificaties
Gebonden, blz.
|
Engels
Springer International Publishing |
2019
ISBN13: 9783030045128
Rubricering
Levertijd ongeveer 9 werkdagen
Gratis verzonden
Samenvatting
This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications.
Specificaties
ISBN13:9783030045128
Taal:Engels
Bindwijze:gebonden
Uitgever:Springer International Publishing
Inhoudsopgave
<p>Chapter 1. Invention and Evaluation of Transistors and Integrated Circuits.- Chapter 2. General overview of the basic structure and operation of a typical silicon on insulator metal-semiconductor field effect transistor SOI-MESFET .- Chapter 3. Modeling of Classical SOI-MESFET.- Chapter 4. Design and modeling of triple-material gate SOI-MESFET.- Chapter 5. Three-dimensional analytical model of the non-classical three-gate SOI-MESFET .- Chapter 6. Analytical investigation of subthreshold performance of SOI-MESFET devices.- Chapter 7. Future works on Silicon-on-insulator metal semiconductor field effect transistors (SOI-MESFETs).<br></p>