Handbook of Silicon Carbide Materials and Devices

Provides a state-of-the-art treatment on SiC growth, material characterization, device processing, and device fabrication. Covers silicon carbide bulk crystal and epitaxial growth, characterization methods, devices, novel technologies, and expert views on future outlook and key challenges ahead. Addresses their applications in high-power and high-temperature devices, especially those used in power electronics and microelectronic systems. Includes contributions from major groups and national initiatives around the world. Intended for a broad audience, covering the fundamental science and state-of-the-art applications of SiC science and technology.